MMBT3904

SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 Type SMBT3904/MMBT3904 SMBT3904S Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation- Marking s1A s1A 1=B Pin Configuration 2=E 3=C - Package SOT23 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VEBO IC Ptot Value 40 60 6 200 330 250 Unit V mA mV TS ≤ 71°C, SOT23, SMBT3904 TS ≤ 115°C, SOT363, SMBT3904S Junction temperature Storage temperature Thermal Resistance Parameter Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 140 °C Junction - soldering SMBT3904S point1) Unit K/W SMBT3904/MMBT3904 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2012-08-21 http://www.Datasheet4U.com SMBT3904...MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 IC = 1 mA, IB = 0 Unit V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO ICBO hFE 60 6 - - 50 nA - Emitter-base br...