Trench Gate Power MOSFET
IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T
N-Channel Enhancement Mode
VDSS = ID25 =
RDS(on) ≤
250V 50A 60mΩ
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G S
D (Tab)
GD S
D (Tab)
Symbol
VDSS VDGR V
GSM
ID25 IDM IA EAS PD
TJ TJM Tstg
TL
Md FC Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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