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HFS3N80
800V N-Channel MOSFET
Description
HFS3N80 Dec 2005 BVDSS = 800 V HFS3N80 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ (Typ.) ) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V ...
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