RCR1540ESJ

® RCR15 P-Channel Enhancement Mode Field Effect Transistor z Features z Pin Configurations 40ESJ VDS (V) = -20V,ID = -4A RDS(ON)<55mΩ @ VGS= -4.5V RDS(ON)<63mΩ @ VGS= -2.5V RDS(ON)<83mΩ @ VGS= -1.8V SOT23-3L Package ESD Protected:3000V HBM z General Description The RCR1540ESJ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. z Package Information z Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Sy mbol VDS VGS Ratings -20 ±8 Unit V V Drain-Source Voltage Gate-Source Voltage 1/5 YKKJPD-V3.1 http://www.Datasheet4U.com ® RCR15 Drain Current (Continuous) Drain Current (Pulse) Power Dissipation TA=25°C TA=25°C TA=70°C ID IDM PD TJ//TSTG -4 -3.2 -30 1.4 -55~150 40ESJ A A W ℃ Operating Temperature/ Storage Temperature z Electrical Characteristics @TA=25℃ unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit ON/OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current V(BR)DSS IDSS VGS(th) IGSS VGS = 0V, ID= -250μA VDS = -16 V , VGS = 0V VGS =VDS , IDS=-250μA -20 --0.3 ----8 --- ----0.65 -50 59 74 16 -0.81 --1 -1 ±10 55 63 83 --1.0 -2.2 V μA V μA mΩ mΩ mΩ S V A VGS=±8V , VDS=0V VGS = -4.5V , ID= -4A VGS = -2.5V , ID= -4A VGS = -1.8V , ID= -2A Drain-Source On-state Resistance RDS(on) Forward Transconductance Dio...