MRF1946A

HG HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR MRF1946A . . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. ω High Common Emitter Power Gain ω Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% ω Diffused Emitter Resistor Ballasting ω Characterized to 220 MHz ω Load Mismatch at High Line and Overdrive Conditions MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 255C Derate above 255C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Value 16 36 4.0 8.0 100 0.57 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/5C 5C 5C CASE 145A–09, STYLE 1 MRF1946A CASE 211–07, STYLE 1 MRF1946 THERMAL CHARACTERISTICS Symbol RθJC Max 1.75 Unit 5C/W ELECTRICAL CHARACTERISTICS (TC = 255C unless otherwise noted.) Characteristic Symbol V(BR)CEO V(BR)CES V(BR)EBO ICES Min 16 36 4.0 — Typ — — — — Max — — — 5.0 Unit Vdc Vdc Vdc mAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 255C) ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 40 75 150 — DYNAMIC CHARA...