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F10N60 Dataheets PDF



Part Number F10N60
Manufacturers Pan Jit International
Logo Pan Jit International
Description 600V N-Channel Enhancement Mode MOSFET
Datasheet F10N60 DatasheetF10N60 Datasheet (PDF)

PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL.

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PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP10N60 PJF10N60 MARKING P10N60 F10N60 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 1 0 N6 0 P J F 1 0 N6 0 Uni ts V V 600 +30 10 40 156 1 .2 5 10 40 50 0 .4 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 500 0 .8 6 2 .5 2 .5 100 O C Avalanche Energy with Single Pulse IAS=10A, VDD=50V, L=10mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance Note: 1. Maximum DC current limited by the package O PAN JIT RESER VES THE RIGHT T O IMPROVE PRODUCT DESIGN,FUNCTIONSAND RELIABILITYWITHOUT NOTICE March 31,2010-REV.00 PAGE . 1 http://www.Datasheet4U.com PJP10N60 / PJF10N60 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 5.0A VDS=600V, VGS=0V V GS =+3 0 V, V D S =0 V 600 2 .0 - 0.78 - 4 .0 1.0 10 +100 V V Ω uA nΑ Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd - 4 1 .6 8 .6 14.2 16.2 18.6 4 0 .2 2 2 .8 1520 140 12.5 52 22 32 ns 86 38 pF nC V D S = 4 8 0 V, ID = 1 0 A , V GS =1 0 V - t d (o n) tr t d (o ff) tf C C C i ss VDD=300V, I D =10A V GS =1 0 V, RG=25Ω - o ss V D S =2 5 V, V GS =0 V f=1 .0 MH Z - rs s S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS I SM V SD t rr Q rr IS = 1 0 A , V GS =0 V V GS =0 V, IF = 1 0 A d i /d t=1 0 0 A /us - 420 4 .2 10 40 1 .4 - A A V ns uC Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%. March 31,2010-REV.00 PAGE . 2 PJP10N60 / PJF10N60 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) ID - Drain-to-Source Current (A) ID - Drain Source Current (A) 20 VGS= 20V~ 6.0V 100 VDS =50V 10 TJ = 125oC 25oC 16 12 8 4 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 5.0V 1 0.1 -55oC 0.01 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 7 Fig.1 Output Characteristric Fig.2 Transfer Characteristric 2 RDS(ON) - On Resistance(Ω ) RDS(ON) - On Resistance(Ω ) 4 ID =5.0A 3 1.5 1 VGS=10V 2 TJ =25oC 0.5 VGS = 20V 1 0 0 2 4 6 8 10 12 14 16 18 20 ID - Drain Current (A) 0 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2.8 2.4 2 1.6 1.2 0.8 0.4 2800 C - Capacitance (pF) VGS =10 V ID =5.0A 2400 2000 1600 1200 800 400 0 f = 1MHz VGS = 0V Ciss C C C Coss Crss 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature March 31,2010-REV.00 Fig.6 Capacitance PAGE. 3 PJP10N60 / PJF10N60 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg - Gate Charge (nC) 40 45 VDS=480V VDS=300V VDS=120V IS - Source Current (A) ID =10A 10 VGS = 0V 1 TJ = 125oC 25oC 0.1 -55oC 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(Normalized) 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 TJ - Junction Temperature (oC) 0 25 50 75 100 125 150 Fig.9 Breakdown Voltage vs Junction Temperature March 31,2010-REV.00 PAGE. 4 PJP10N60 / PJF10N60 LEGAL ST ATEMENT Copyright PanJit Internati.


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