Document
PJP10N60 / PJF10N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
1
2 G
3 D
S
1
2 G
3 S D
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJP10N60
PJF10N60
MARKING
P10N60
F10N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
Gate
50PCS/TUBE
50PCS/TUBE
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r
T A =2 5 O C
S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA
P J P 1 0 N6 0
P J F 1 0 N6 0
Uni ts V V
600
+30
10 40 156 1 .2 5
10 40 50 0 .4
A A W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0 500 0 .8 6 2 .5 2 .5 100
O
C
Avalanche Energy with Single Pulse
IAS=10A, VDD=50V, L=10mH
mJ C /W C /W
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
Note: 1. Maximum DC current limited by the package
O
PAN JIT RESER VES THE RIGHT T O IMPROVE PRODUCT DESIGN,FUNCTIONSAND RELIABILITYWITHOUT NOTICE
March 31,2010-REV.00
PAGE . 1
http://www.Datasheet4U.com
PJP10N60 / PJF10N60
ELECTRICAL CHARACTERISTICS
( TA=25OC unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V D SS V GS (th) R D S (o n) I DSS I GS S
V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 5.0A VDS=600V, VGS=0V V GS =+3 0 V, V D S =0 V
600 2 .0 -
0.78 -
4 .0 1.0 10
+100
V V Ω uA
nΑ
Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q
gd
-
4 1 .6 8 .6 14.2 16.2 18.6 4 0 .2 2 2 .8 1520 140 12.5
52 22 32 ns 86 38 pF nC
V D S = 4 8 0 V, ID = 1 0 A , V GS =1 0 V
-
t d (o n) tr t d (o ff) tf C C C
i ss
VDD=300V, I D =10A V GS =1 0 V, RG=25Ω
-
o ss
V D S =2 5 V, V GS =0 V f=1 .0 MH Z
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
IS I SM V SD t rr Q
rr
IS = 1 0 A , V GS =0 V V GS =0 V, IF = 1 0 A d i /d t=1 0 0 A /us
-
420 4 .2
10 40 1 .4 -
A A V ns uC
Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e
NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
March 31,2010-REV.00
PAGE . 2
PJP10N60 / PJF10N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
ID - Drain-to-Source Current (A)
ID - Drain Source Current (A)
20
VGS= 20V~ 6.0V
100
VDS =50V
10
TJ = 125oC 25oC
16 12 8 4 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V)
5.0V
1
0.1
-55oC
0.01 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 7
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
2 RDS(ON) - On Resistance(Ω ) RDS(ON) - On Resistance(Ω )
4
ID =5.0A
3
1.5
1
VGS=10V
2 TJ =25oC
0.5
VGS = 20V
1
0 0 2 4 6 8 10 12 14 16 18 20 ID - Drain Current (A)
0
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
RDS(ON) - On-Resistance(Normalized)
2.8 2.4 2 1.6 1.2 0.8 0.4
2800
C - Capacitance (pF)
VGS =10 V ID =5.0A
2400 2000 1600 1200 800 400 0
f = 1MHz VGS = 0V
Ciss
C C C
Coss Crss 0
-50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC)
5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
March 31,2010-REV.00
Fig.6 Capacitance
PAGE. 3
PJP10N60 / PJF10N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
VGS - Gate-to-Source Voltage (V)
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg - Gate Charge (nC) 40 45
VDS=480V VDS=300V VDS=120V
IS - Source Current (A)
ID =10A
10
VGS = 0V
1
TJ = 125oC
25oC
0.1
-55oC
0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
BVDSS - Breakdown Voltage(Normalized)
1.2 ID = 250µA
1.1
1
0.9
0.8 -50 -25
TJ - Junction Temperature (oC)
0
25
50
75
100
125
150
Fig.9 Breakdown Voltage vs Junction Temperature
March 31,2010-REV.00
PAGE. 4
PJP10N60 / PJF10N60
LEGAL ST ATEMENT
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