STP18N65M5

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB Order code STF18N65M5 STI18N65M5 STP18N65M5 STW18N65M5 ■ ■ ■ ■ VDSS @ TJmax RDS(on) max ID 3 3 12 1 2 TO-220FP 710 V < 0.22 Ω 15 A TAB I²PAK Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Figure 1. Internal schematic diagram TO-220 3 1 2 2 1 3 TO-247 Applications ■ Switching applications $4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Marking Package TO-220FP I²PAK 18N65M5 STP18N65M5 STW18N65M5 TO-220 TO-247 Tube Packaging ' 3 !-V Order code STF18N65M5 STI18N65M5 July 2012 This is information on a product in full production. Doc ID 022879 Rev 3 1/19 www.st.com 19 http://www.Datasheet4U.com Contents STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....