SKP202

N-Channel MOS FET SKP202 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed March. 2007 ■Package---TO-263 ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1) S (3) ■Absolute maximum ratings (Ta=25°C） Parameter Sy Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Channel Temperature Storage Temperature mbol VDSS 20 VGSS ±3 ID ± ID(pulse) *1 ±1 PD 95 EAS *2 20 IAS Tch 15 Tstg Rating 0 0 45A 80A (Tc=25°C) 0 45 0 －55 to 150 Unit V V A A W mJ A °C °C *1 PW≤100μs，duty cycle≤１% *2 V DD=20V, L=180μH，ILp=45A, unclamped, RG=50Ω, See Fig.1 Sanken Electric Co., Ltd. http://www.sanken-ele.co.jp/en/ 1/9 T02-007EA-070227 http://www.Datasheet4U.com N-Channel MOS FET SKP202 Electrical characteristics Parameter S ymbol Test Conditions March. 2007 (Ta=25°C） Limits MIN. TYP 0 ±100 100 0 28 45 2000 400 80 30 ID22A, VDD≈100V RL=4.5Ω, VGS=10V RG=5Ω See Fig.2 50 ISD=45A,VGS=0V VDS=10V, ID=1mA 1. 0 -8 1.5 V mV/°C 100 ns 90 pF 53 4.5 . MAX. Unit V nA μA V S mΩ Drain to Source breakdown Voltage Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Diode Forward Voltage Gat...