SCTMU001F

SCTMU001F N-channel SiC power MOSFET Outline Datasheet VDSS RDS(on) (Typ.) ID PD Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 400V 120m 20A 132W TO220AB Inner circuit (2) *1 (1) (1) Gate (2) Drain (3) Source *1 Body Diode (3) 6) Pb-free lead plating ; RoHS compliant Packaging specifications Packing Tube 50 SCTMU001F Application ・Audio Type Reel size (mm) Tape width (mm) Basic ordering unit (pcs) Taping code Marking Absolute maximum ratings (Ta = 25C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation (Tc = 25C) Junction temperature Range of storage temperature Tc = 25C Symbol VDSS ID *1 ID,pulse *2 VGSS PD Tj Tstg Value 400 20 60 -6 to 22 132 150 -55 to 150 Unit V A A V W C C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. http://www.Datasheet4U.com 1/9 2013.12 - Rev.A SCTMU001F Thermal resistance Values Parameter Thermal resistance, junction - case Soldering temperature, wavesoldering for 10s Symbol Min. RthJC Tsold Typ. 0.72 - Data Sheet Unit Max. 0.95 265 C/W C Electrical characteristics (Ta = 25C) Values Parameter Symbol Conditions Min. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA VDS = 400V, VGS = 0V Zero gate voltage drain current IDSS Tj = 25C Tj = 150°C Gate - Source leakage current Gate - Source leakage current Gate threshold voltage IGSS+ IGSSVGS (th) VGS = +22V, V...