GKI10526

100 V, 20 A, 34.4 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI10526 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 20 A  RDS(ON) ----------54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)  Qg------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.5 V Gate Drive  100 % UIL Tested  RoHS Compliant Applications  DC-DC converters  Synchronous Rectification  Power Supplies Package DFN 5 × 6 8pin DDDD 8pin DDDD SSSG 1pin GSSS 1pin Not to scale Equivalent circuit D(5)(6)(7)(8) G(4) Absolute Maximum Ratings  Unless otherwise specified, TA = 25 °C Parameter Symbol Test conditions Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Single Pulse Avalanche Energy Avalanche Curre...