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GKI03080

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N Channel Trench Power MOSFET


Description
30 V, 26 A, 6.9 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI03080 Features  V(BR)DSS --------------------------------- 30 V (ID = 100 µA)  ID ---------------------------------------------------------- 26 A  RDS(ON) ----------8.5 mΩ max. (VGS = 10 V, ID = 25.0 A)  Qg------- 7.1 nC (VGS = 4.5 V, VDS = 15 V, ID = 31.5 A)  Low Total Gate Charge  High Speed...



SANKEN

GKI03080

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