Document
PRELIMINARY
SFT10000/3
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
APPLICATION NOTES:
SFT10000 Darlington Transistor is direct replacement of Motorolla MJ 10000. It is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drives • Motor Controls • Deflection Cirsuits.
20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR
TO-3
MAXIMUM RATINGS
Collector-Emitter V oltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation Derate above 25oC Operating and Storage T emperature Thermal Resistance, Junction to Case CASE OUTLINE: TO-3 Pin Out: 1 - Collector 2 - Base 3 - Emmiter @ TC = 25oC @ TC = 100oC Continuous Peak
SYMBOL
VCEO VCEV V EB IC I CM IB PD
VALUE
350 450 8 20 30 2.5 175 100 1 -65 to +200 1
UNITS
Volts Volts Volts Amps Amps W W W/oC
o o
TJ, TSTG R 2 JC
C
C/W
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0011A
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PRELIMINARY
SFT10000/3
SOLID STATE DEVICES, INC.
ELECTRICAL CHARACTERISTICS
Collector-Emitter Sustaining V oltage (IC = 250mA, IB = 0, VCLAMP = Rated V CEO) Collector-Emitter Sustaining V oltage (VCLAMP = Rated V CEX, TC = 100oC) Collector Cutoff Current (VCE = Rated Value, VBE(off) = 1.5VDC) Collector Cutoff Current (VCEV = Rated VCEV, RBE = 50S, TC = 100oC) Emitter Cutoff Current (VEB = 8VDC, IC = 0) DC Current Gain* (VCE = 5VDC) IC = 5ADC IC = 10ADC IC = 2 A IC = 10 A TC = 25 oC TC = 100 oC
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773
SYMBOL
VCEO(sus) VCEX(sus) I CBO
MIN
350 400 275 -
MAX
0.25 5.0
UNITS
VDC VDC mADC mADC
ICEV IEBO
HFE
-5 50 40 10 100 -
150
600 400 1.9 3.0 2.0 2.5 2.5 5.0 325 0.2 0.6 3.5 2.4 5.5 3.7
mADC
Collector-Emitter Saturation V oltage* IC = 10ADC, IB = 400mADC, TC = 25oC IC = 20ADC, IB = 1ADC, TC = 25oC IC = 10ADC, IB = 400mADC, TC = 100oC Base-Emitter Saturation V oltage* (IC = 10ADC, IB = 400mADC) Diode Forward V oltage (IF = 10ADC) Small Signal Current Gain (IC = 1ADC , VCE = 10VDC, f = 1MHz) Output Capacitance (VCB= 30VDC , IE = 0ADC, f = 2.0MHz) Delay Time Rise Time Storage Time Fall Time Storage Time Crossover Time IC = 10A(pk), VCLAMP = Rated VCEX, IB1 = 400mA, VBE(off) = 5VDC, TC = 100oC VCC = 250VDC , IC = 10ADC, IB1 = 400mADC, VBE(off) = 5VDC tP = 50:sec, Duty Cycle # 2% TC = 25 oC TC = 100 oC
VCE(SAT)
VDC
VBE (SAT) VF HFE Cob td tr ts tf t sv tc
VDC VDC
pf :s :s :s :s :s :s
*Pulse Test: Pulse Width = 300us, Duty Cycle = 2%
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