2SA1371

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistor 2SA1371 TRANSISTOR (PNP) TO – 92M TO – 92MOD 1. COLLECTOR 1. EMITTER 2. BASE 2. COLLECTOR 3. EMITTER 3. BASE FEATURES z High Breakdown Voltage z Small Reverse Transition Capacitance and High Frequency MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -300 -300 -5 -0.1 1 125 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE (sat) Cob fT Test conditions Min -300 -300 -5 -0.1 -0.1 40 320 -0.6 -1 5 100 V V pF MHz Typ Max Unit V V V μA μA IC= -10µA,IE=0 IC=-1mA,IB=0 IE=-10µA,IC=0 VCB=-200V,IE=0 VEB=-4V,IC=0 VCE=-10V, IC=-10mA IC=-20mA,IB=-2mA IC=-20mA,IB=-2mA VCB=-30V,IE=0, f=1MHz VCE=-30V,IC=-10mA CLASSIFICATION OF hFE RANK RANGE C 40-80 D 60-120 E 100-200 F 160-320 A,Dec,2010 Free Datasheet http://www.Datasheet4U.com ...