IRF1324S-7PPBF

IRF1324S-7PPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 0.8mΩ 1.0mΩ 429A 240A c D S G S S S S D 2Pak 7 Pin G D S Gate Standard Pack Form Tube Tape and Reel Left Quantity 50 800 Drain Source Base part number IRF1324S-7PPbF Package Type D Pak-7Pin 2 Orderable Part Number IRF1324S-7PPbF IRF1324STRL-7PP Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. d f 429 303 240 1640 300 2.0 ± 20 1.6 -55 to + 175 300 (1.6mm from case) 230 See Fig. 14, 15, 22a, 22b, ™ ™ Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Ù e g ...