Document
Data Sheet No. PD60235_B
IPS1011(S)(R)PbF
INTELLIGENT POWER LOW SIDE SWITCH
Features
• • • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current
Product Summary Rds(on) 13mΩ (max.) Vclamp 36V Ishutdown 85A (typ.) Packages
Description
The IPS1011(S)(R)PbF is a three terminal Intelligent Power Switch (IPS) that features a low side MOSFET with over-current, over-temperature, ESD protection and drain to source active clamp. This device offers protections and the high reliability required in harsh environments. The switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165°C or when the drain current reaches 85A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
TO-220 IPS1011PbF
D²Pak D-Pak IPS1011SPbF IPS1011RPbF
Typical Connection
+Bat
Load D 1 Input R Input Signal V Diag IN S 3 2
Control
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IPS1011(S)(R)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol
Vds Vds cont. Vin Isd cont. Pd
Parameter
Maximum drain to source voltage Maximum continuous drain to source voltage Maximum input voltage Max diode continuous current (limited by thermal dissipation) Maximum power dissipation (internally limited by thermal protection) Rth=5°C/W IPS1011 Rth=40°C/W IPS1011S 1” sqr. footprint Rth=50°C/W IPS1011R 1” sqr. footprint Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω Between drain and source Other combinations Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω Between drain and source Other combinations Max. storage & operating temperature junction temperature Lead soldering temperature (10 seconds)
Min.
-0.3 -0.3
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
Max.
36 28 6 5 25 3.1 2.5 4 3 0.5 0.3 150 300
Units
V V V A W
ESD
kV
Tj max. Tsoldering
-40
⎯
°C °C
Thermal Characteristics
Symbol
Rth1 Rth2 Rth1 Rth2 Rth3 Rth1 Rth2 Rth3
Parameter
Thermal resistance junction to ambient IPS1011 TO-220 free air Thermal resistance junction to case IPS1011 TO-220 Thermal resistance junction to ambient IPS1011S D²Pak std. footprint Thermal resistance junction to ambient IPS1011S D²Pak 1” sqr. footprint Thermal resistance junction to case IPS1011S D²Pak Thermal resistance junction to ambient IPS1011R D-Pak std. footprint Thermal resistance junction to ambient IPS1011R D-Pak 1” sqr. footprint Thermal resistance junction to case IPS1011R D-Pak
Typ.
50 1.2 60 40 1.2 70 50 1.2
Max.
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
Units
°C/W
Recommended Operating Conditions
These values are given for a quick design. .