Document
Preliminary
RMLV0408E Series
4Mb Advanced LPSRAM (512k word × 8bit)
R10DS0217EJ0001 Rev.0.01 2013.09.10
Description
The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP, 32-pin TSOP II or 32-pin STSOP.
Features
Single 3V supply: 2.7V to 3.6V Access time: 45/55ns (max.) Current consumption: ── Standby: 0.4µA (typ.) Equal access and cycle times Common data input and output ── Three state output Directly TTL compatible ── All inputs and outputs Battery backup operation
Part Name Information
Part Name RMLV0408EGSP-4S2 RMLV0408EGSP-5S2 RMLV0408EGSB-4S2 RMLV0408EGSB-5S2 RMLV0408EGSA-4S2 RMLV0408EGSA-5S2 Access time 45 ns 55 ns 45 ns 55 ns 45 ns 55 ns -40 ~ +85°C Temperature Range Package 525-mil 32-pin plastic SOP
400-mil 32-pin plastic TSOP II
8mm x 13.4mm STSOP
R10DS0217EJ0001 Rev.0.01 2013.09.10
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RMLV0408E Series
Preliminary
Pin Arrangement 32-pin SOP 32-pin TSOP II
A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A15 A17 WE# A13 A8 A9 A11 OE# A10 CS# I/O7 I/O6 I/O5 I/O4 I/O3 A11 A9 A8 A13 WE# A18 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32-pin STSOP
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE# A10 CS# I/O7 I/O6 I/O5 I/O4 I/O3 Vss I/O2 I/O1 I/O0 A0 A1 A2 A3
(Top view)
(Top view)
Pin Description
Pin name VCC VSS A0 to A18 I/O0 to I/O7 CS# WE# OE# Function Power supply Ground Address input Data input/output Chip select Write enable Output enable
R10DS0217EJ0001 Rev.0.01 2013.09.10
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Free Datasheet http://www.Datasheet4U.com
RMLV0408E Series
Preliminary
Block Diagram
A0 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 VCC VSS
Row Decoder
・ ・ ・ ・ ・
Memory Matrix 2,048 x 2,048
I/O0
Input Data Control
・ ・
Column I/O Column Decoder
・ ・
I/O7 A1 A2 A3 A14 A15 A16 A17 A18
・ ・
CS# WE# OE#
Timing Pulse Generator Read/Write Control
Operation Table
CS# H L L L Note 1. WE# X H L H H: VIH L:VIL OE# X L X H X: VIH or VIL I/O0 to I/O7 High-Z Dout Din High-Z Operation Standby Read Write Output disable
R10DS0217EJ0001 Rev.0.01 2013.09.10
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RMLV0408E Series
Preliminary
Absolute Maximum Ratings
Parameter Power supply voltage relative to VSS Symbol VCC Value -0.5 to +4.6 -0.5*2 to VCC+0.3*3 0.7 -40 to +85 -65 to +150 -40 to +85 unit V V W °C °C °C
Terminal voltage on any pin relative to VSS VT Power dissipation PT Operation temperature Topr Storage temperature range Tstg Storage temperature range under bias Tbias Note 2. -3.0V for pulse ≤ 30ns (full width at half maximum) 3. Maximum voltage is +4.6V.
DC Operating Conditions
Symbol VCC VSS Input high voltage VIH Input low voltage VIL Ambient temperature range Ta Note 4. -3.0V for pulse ≤ 30ns (full width at half maximum) Supply voltage Parameter Min. 2.7 0 2.2 -0.3 -40 Typ. 3.0 0 ─ ─ ─ Max. 3.6 0 VCC+0.3 0.6 +85 Unit V V V V °C Note
4
DC Characteristics
Parameter Input leakage current Output leakage current Operating current Average operating current Symbol | ILI | | ILO | ICC ICC1 Min. ─ ─ ─ ─ Typ. ─ ─ ─ ─ Max. 1 1 10 20 Unit A A mA mA Test conditions Vin = VSS to VCC CS# =VIH or OE# =VIH or WE#= VIL, VI/O = VSS to VCC CS# =VIL, Others = VIH/VIL, II/O = 0mA Min. cycle, duty =100%, II/O = 0mA CS# =VIL, Others = VIH/VIL Cycle =1s, duty =100%, II/O = 0mA CS# ≤ 0.2V, VIH ≥ Vcc-0.2V, VIL ≤ 0.2V CS# =VIH, Others = VSS to VCC ~+25°C ~+40°C ~+70°C ~+85°C IOH = -1mA IOH = -0.1mA IOL = 2.1mA IOL = 0.1mA Vin = VSS to VCC, CS# ≥ VCC-0.2V
ICC2 Standby current Standby current
─
─ 0.1*5 0.4*5 ─ ─ ─ ─ ─ ─ ─
2.5
mA
ISB
─ ─ ─
0.3 2 3 5 7 ─ ─ 0.4 0.2
mA A A A A V V V V
ISB1 ─ ─ Output high voltage VOH VOH2 Output low voltage VOL VOL2 Note 2.4 VCC-0.2 ─ ─
5. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=25ºC), and not 100% tested.
Capacitance
(Vcc = 2.7V ~ 3.6V, f = 1MHz, Ta = -40 ~ +85°C*2)
Parameter Symbol Min. Input capacitance C in ─ Input / output capacitance C I/O ─ Note 6. This parameter is sampled and not 100% tested. R10DS0217EJ0001 Rev.0.01 2013.09.10 Typ. ─ ─ Max. 8 10 Unit pF pF Test conditions Vin =0V VI/O =0V Note 6 6
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RMLV0408E Series
Preliminary
AC Characteristics
Test Conditions (Vcc = 2.7V ~ 3.6V, Ta = -40 ~ +85°C) Input pulse levels: VIL = 0.4V, VIH = 2.4V Input rise and fall time: 5ns Input and output timing reference level: 1.4V Output load: See figures (Including scope and jig) I/O CL = 30 pF (-4S2) CL = 50 pF (-5S2) 1.4V
RL.