Document
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 44 7.1 27 Single
S
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC
0.50
I2PAK (TO-262)
D2PAK (TO-263)
DESCRIPTION
G G G D S D S
D P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9640L, SiHF9640L) is available for low-profile applications.
D2PAK (TO-263) IRF9640STRRPbFa SiHF9640STR-E3a I2PAK (TO-262) SiHF9640L-GE3 IRF9640LPbF SiHF9640L-E3
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF9640S-GE3 IRF9640SPbF SiHF9640S-E3 D2PAK (TO-263) IRF9640STRLPbFa SiHF9640STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Currenta VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT - 200 ± 20 - 11 - 6.8 - 44 1.0 0.025 700 - 11 13 125 3.0 - 5.0 - 55 to + 150 300d UNIT V
A
W/°C mJ A mJ W V/ns °C
EAS IAR EAR TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 , IAS = - 11 A (see fig. 12). c. ISD - 11 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91087 S11-1052-Rev. D, 30-May-11 www.vishay.com 1
Free Datasheet http://www.Datasheet4U.com
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJA RthJC TYP. MAX. 62 40 1.0 °C/W UNIT
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0 V, ID = - 250 μA Reference to 25 °C, ID = - 1 mA VDS = VGS, ID = - 250 μA VGS = ± 20 V VDS = - 200 V, VGS = 0 V VDS = - 160 V, VGS = 0 V, TJ = 125 °C VGS = - 10 V ID = 6.6 Ab Ab VDS = - 50 V, ID = - 6.6
- 200 - 2.0 4.1
- 0.20 -
- 4.0 ± 100 - 100 - 500 0.50 -
V V/°C V nA μA S
VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5
-
1200 370 81 14 43 39 38 4.5 7.5
44 7.1 27 nH ns nC pF
VGS = - 10 V
ID = - 11 A, VDS = - 160 V, see fig. 6 and 13b
-
VDD = - 100 V, ID = - 11 A, Rg = 9.1 , RD = 8.6 , see fig. 10b
-
Between lead, 6 mm (0.25") from package and center of die contact
D
G
S
-
250 2.9
- 11 A - 44 - 5.0 300 3.6 V ns μC
G
S
TJ = 25 °C, IS = -11 A, VGS = 0
Vb
TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pul.