P20N06

Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220 saves board space Fast switching speed High performance trench technology FQ P20N06/ MCP20N06 PRO DUCT SUM M A RY V ) rDS(on) m (Ω) DS (V 26.5 @ V G S = 10V 60 32.5 @ V G S = 4.5V ID (A ) 87 a D1 G1 S1 N-Channel MOSFET ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Sym bol Lim it Units Param eter VDS 60 Drain-Source Voltage V VGS ±20 G ate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o a o TC=25 C ID o 87 240 90 300 IDM IS TC=25 C PD A A W o Continuous Source Current (Diode Conduction) Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 175 C T H E RMA L RE SIST A NC E RA T ING S Param eter Sym bol M axim umJunction-to-Am bient M axim umJunction-to-Case a Maxim um U nits 62.5 0.5 o o RθJA RθJC C/W C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature www.freescale.net.cn 1 http://www.Datasheet4U.com Freescale FQ P20N06/ MCP20N06 SPECIFICATIONS (TA = 25oC UNLESS OTHERWI...