N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP20N06/CEB20N06
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D
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G S CEB SERIES TO-263(DD-PAK)
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CEP SERIES TO-2...
