2SC3279

ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25 o C) Symbol Value 30 30 10 6 5 2 0.2 750 150 -55 to +150 Unit V V V A A A mW O O Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Note 1: Pulse Width=10ms (Max.), Duty Cycle=30%(Max.) Pulsed(Note 1) DC VCBO VCES VCEO VEBO ICP IC IB Ptot Tj TS C C G S P FORM A IS AVAILABLE РАДИОТЕХ-ТРЕЙД ® Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru http://www.Datasheet4U.com ST 2SC3279 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=1V, IC=0.5A L M N P at VCE=1V, IC=2A Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=6V Collector-Emitter Breakdown Voltage at IC=10mA Emitter-Base Breakdown Voltage at IE=1mA Collector Output Capacitance at VCB=10V, f=1.0MHz Collector to Emitter Saturation Voltage at IC=2A, IB=50mA Base-Emitter Voltage at VCE=1V, IC=2A Transition Frequency at VCE=1V, IC=0.5A fT 150 MHz VBE 0.86 1.5 V VCE(sat) 0.2 0.5 V Cob 27 pF IEBO V(BR)CEO V(BR)EBO 10 6 0.1 µA V V ICBO 0.1 µA hFE hFE hFE hFE hFE 140 200 300 420 70 200 24...