C3279

·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■ APPLICATION：POWER AMPLIFIER APPLICATION、 SWITCHING APPLICATION. ■■MAXIMUM RATINGS （Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg 30 10 6 2 750 150 V V V A mW ℃ C3279 —NPN silicon — ﹣55~150 ℃ ■■ ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO 30 10 6 0.86 0.2 150 27 1.5 0.5 MIN. 140 TYP. MAX. UNIT 600 0.1 0.1 µA µA V V V V V MHz PF TEST CONDITION VCE= 1V，Ic=500 mA VCB=30 V，IE=0 VEB= 6V，Ic=0 Ic= 0.1mA，IE=0 Ic= 10mA，IB=0 IE= 1mA，Ic=0 VCE= 1V，Ic= 2A Ic= 2A，IB= 50mA Ic= 0.5A，VCE= 1V VCB= 10V, I E=0, f = 1MHz Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage Base-Emitter Voltage BVEBO VBE Collector-Emitter Saturation Voltage VCE(sat) Gain bandwidth product Common Base Output Capacitance fT Cob ■■hFE Classification Classification hFE L 140～240 M 200～330 N 300～450 P 420～600 http://www.Datasheet4U.com ...