P-Channel MOSFET
SUD50P10-43
New Product
Vishay Siliconix
P-Channel 100-V (D-S) 175 _C MOSFET
PRODUCT SUMMARY
VDS (V)
–100
FEATURES
D ...
Description
SUD50P10-43
New Product
Vishay Siliconix
P-Channel 100-V (D-S) 175 _C MOSFET
PRODUCT SUMMARY
VDS (V)
–100
FEATURES
D TrenchFETr Power MOSFET ID (A)a Qg (Typ)
105 nC –38
rDS(on) (W)
0.043 at VGS = –10 V
RoHS
COMPLIANT
TO-252
S
G Drain Connected to Tab G D S D P-Channel MOSFET
Top View Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 175 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current Source Drain Diode Current Continuous Source-Drain Avalanche Current Single-Pulse Avalanche Energy L=0 0.1 1 mH TC = 25 _C Maximum Power Dissipation TC = 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 _C TA = 25 _C IDM IS IAS EAS ID
Symbol
VDS VGS
Limit
–100 "20 –38a –31.8a –9.4b, c –7.8b, c –50 –50a –6.9b, c –40 80 136 95 8.3b, c 5.8b, c –50 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface mounted on 1” x 1” FR4 Board. c. t = 10 sec. d. Maximum under steady state conditions is 40 _C/W. Document Number: 73445 S–60311—Rev. B, 27-Feb-06 www.vishay.com t p 10 sec Steady State
Symbol
RthJA RthJC
Typical
15 0.85
Maximum
18 1.1
Unit
_C/W
1
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SUD50P10-43
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE N...
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