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DSA30C45HB

IXYS

Schottky Diode Gen

DSA30C45HB preliminary Schottky Diode Gen ² VRRM I FAV VF = = 2x = 45 V 15 A 0.62 V High Performance Schottky Diode...


IXYS

DSA30C45HB

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DSA30C45HB preliminary Schottky Diode Gen ² VRRM I FAV VF = = 2x = 45 V 15 A 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C45HB Backside: cathode 1 2 3 Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching Applications: ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters Package: TO-247 ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a © 2013 IXYS all rights reserved http://www.Datasheet4U.com DSA30C45HB preliminary Schottky Symbol VRSM VRRM IR VF Definition max. repetitive reverse blocking voltage reverse current, drain current Ratings Conditions TVJ = 25°C TVJ = 25°C 45 V 45 V 15 A 30 A 15 A 30 A T VJ = 175 °C d = 0.5 TVJ = 175 °C 0.42 9.2 1.75 0.25 TC = 25°C t = 10 ms; (50 Hz), sine; VR = 0 V VR = I AS = 5 V f = 1 MHz 13 A L = 180 µH TVJ = 45°C TVJ = 25°C TVJ = 25 °C 497 15.2 1.3 85 340 V mΩ K/W K/W W A pF mJ A TVJ = 125 °C TVJ = 25°C TVJ = 125°C TVJ = 25°C min. typ. max. non-repetitive reverse blocking voltage max. 45 45 250 2.5 0.74 0.90 0.62 0.77 15 Unit V V µA mA V V V V A VR = VR = IF = IF = IF = IF = forwar...




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