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MBR10H90 Dataheets PDF



Part Number MBR10H90
Manufacturers Vishay
Logo Vishay
Description High Voltage Schottky Rectifier
Datasheet MBR10H90 DatasheetMBR10H90 Datasheet (PDF)

MBR(F,B)10H90, MBR(F,B)10H100 www.vishay.com Vishay General Semiconductor High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability 2 MBR10H90 MBR10H100 PIN 1 PIN 2 2 1 MBRF10H90 MBRF10H100 PIN 1 PIN 2 • High frequency operation • Meets MSL level 1, per J-STD-020, LF maxi.

  MBR10H90   MBR10H90



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MBR(F,B)10H90, MBR(F,B)10H100 www.vishay.com Vishay General Semiconductor High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability 2 MBR10H90 MBR10H100 PIN 1 PIN 2 2 1 MBRF10H90 MBRF10H100 PIN 1 PIN 2 • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 CASE TO-263AB K 2 1 MBRB10H90 MBRB10H100 PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. 10 A 90 V, 100 V 250 A 0.64 V 4.5 μA 175 °C Case: TO-220AC, ITO-220AC, TO-263AB Molding compound meets UL 94-V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse current at tp = 2.0 µs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM dV/dt TJ, TSTG VAC MBR10H90 90 90 90 10 250 0.5 10 000 - 65 to 175 1500 V/μs °C V A MBR10H100 100 100 100 V UNIT Revision: 13-Jun-12 Document Number: 88667 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 http://www.Datasheet4U.com MBR(F,B)10H90, MBR(F,B)10H100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS IF = 10 A Maximum instantaneous forward voltage VF (1) IF = 10 A IF = 20 A IF = 20 A Maximum reverse current Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms IR (2) Rated VR TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TJ = 25 °C TJ = 125 °C VALUE 0.77 0.64 0.88 0.73 4.5 6.0 μA mA V UNIT THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJC MBR 2.7 MBRF 5.8 MBRB 2.7 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AC ITO-220AC TO-263AB TO-263AB TO-220AC ITO-220AC TO-263AB TO-263AB Note (1) AEC-Q101 qualified PREFERRED P/N MBR10H100-E3/45 MBRF10H100-E3/45 MBRB10H100-E3/45 MBRB10H100-E3/81 MBR10H100HE3/45 (1) MBRF10H100HE3/45 (1) MBRB10H100HE3/45 (1) UNIT WEIGHT (g) 1.80 1.94 1.33 1.33 1.80 1.94 1.33 1.33 PACKAGE CODE 45 45 45 81 45 45 45 81 BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tube Tape and reel Tube Tube Tube Tape and reel MBRB10H100HE3/81 (1) Revision: 13-Jun-12 Document Number: 88667 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 http://www.Datasheet4U.com MBR(F,B)10H90, MBR(F,B)10H100 www.vishay.com RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Vishay General Semiconductor 20 Resistive or Inductive Load 10 000 Instantaneous Reverse Current (µA) TJ = 150 °C 1000 TJ = 125 °C TJ = 100 °C 100 Average Forward Current (A) 16 MBR MBRB 12 10 8 1 4 MBRF 0.1 TJ = 25 °C 0 0 50 100 150 180 0.01 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 300 10 000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave Peak Forward Surge Current (A) 200 Junction Capacitance (pF) 1 100 250 1000 150 100 100 50 0 10 10 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 100 TJ = 175 °C 10 .


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