MBR(F,B)10H90, MBR(F,B)10H100
www.vishay.com
Vishay General Semiconductor
High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AC ITO-220AC
• Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability
2 MBR10H90 MBR10H100
PIN 1
PIN 2
2 1 MBRF10H90 MBRF10H100
PIN 1
PIN 2
• High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
1
CASE
TO-263AB K
2 1 MBRB10H90 MBRB10H100
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF IR TJ max. 10 A 90 V, 100 V 250 A 0.64 V 4.5 μA 175 °C
Case: TO-220AC, ITO-220AC, TO-263AB Molding compound meets UL 94-V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse current at tp = 2.0 µs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM dV/dt TJ, TSTG VAC MBR10H90 90 90 90 10 250 0.5 10 000 - 65 to 175 1500 V/μs °C V A MBR10H100 100 100 100 V UNIT
Revision: 13-Jun-12
Document Number: 88667 1 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
MBR(F,B)10H90, MBR(F,B)10H100
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS IF = 10 A Maximum instantaneous forward voltage VF (1) IF = 10 A IF = 20 A IF = 20 A Maximum reverse current Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms IR (2) Rated VR TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TJ = 25 °C TJ = 125 °C VALUE 0.77 0.64 0.88 0.73 4.5 6.0 μA mA V UNIT
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance SYMBOL RJC MBR 2.7 MBRF 5.8 MBRB 2.7 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE TO-220AC ITO-220AC TO-263AB TO-263AB TO-220AC ITO-220AC TO-263AB TO-263AB Note (1) AEC-Q101 qualified PREFERRED P/N MBR10H100-E3/45 MBRF10H100-E3/45 MBRB10H100-E3/45 MBRB10H100-E3/81 MBR10H100HE3/45 (1) MBRF10H100HE3/45 (1) MBRB10H100HE3/45
(1)
UNIT WEIGHT (g) 1.80 1.94 1.33 1.33 1.80 1.94 1.33 1.33
PACKAGE CODE 45 45 45 81 45 45 45 81
BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube 50/tube 50/tube 800/reel
DELIVERY MODE Tube Tube Tube Tape and reel Tube Tube Tube Tape and reel
MBRB10H100HE3/81 (1)
Revision: 13-Jun-12
Document Number: 88667 2 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
MBR(F,B)10H90, MBR(F,B)10H100
www.vishay.com RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Vishay General Semiconductor
20 Resistive or Inductive Load
10 000
Instantaneous Reverse Current (µA)
TJ = 150 °C 1000 TJ = 125 °C TJ = 100 °C 100
Average Forward Current (A)
16 MBR MBRB 12
10
8
1
4
MBRF
0.1
TJ = 25 °C
0 0 50 100 150 180
0.01 20 40 60 80 100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
300
10 000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
200
Junction Capacitance (pF)
1 100
250
1000
150
100
100
50
0 10
10 0.1 1 10 100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
100
TJ = 175 °C 10 .