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STGW20V60DF Dataheets PDF



Part Number STGW20V60DF
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description 600V 20A very high speed trench gate field-stop IGBT
Datasheet STGW20V60DF DatasheetSTGW20V60DF Datasheet (PDF)

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 2 1 1 3 • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance 3 TO-220 TAB D²PAK 3 2 1 1 2 • Very fast soft recovery antiparallel diode • Lead free.

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STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 2 1 1 3 • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance 3 TO-220 TAB D²PAK 3 2 1 1 2 • Very fast soft recovery antiparallel diode • Lead free package TO-247 TO-3P Figure 1. Internal schematic diagram Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code STGB20V60DF STGP20V60DF STGW20V60DF STGWT20V60DF June 2013 This is information on a product in full production. Marking GB20V60DF GP20V60DF GW20V60DF GWT20V60DF Package D²PAK TO-220 TO-247 TO-3P Packaging Tape and reel Tube Tube Tube 1/23 www.st.com 23 DocID024360 Rev 3 http://www.Datasheet4U.com Contents STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 DocID024360 Rev 3 http://www.Datasheet4U.com STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol VCES IC IC ICP(1) VGE IF IF IFP(1) PTOT TSTG TJ Parameter Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C Continuous collector current at TC = 100 °C Pulsed collector current Gate-emitter voltage Continuous forward current at TC = 25 °C Continuous forward current at TC = 100 °C Pulsed forward current Total dissipation at TC = 25 °C Storage temperature range Operating junction temperature Value 600 40 20 80 ±20 40 20 80 167 - 55 to 150 - 55 to 175 Unit V A A A V A A A W °C °C 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol RthJC RthJC RthJA Parameter Thermal resistance junction-case IGBT Thermal resistance junction-case diode Thermal resistance junction-ambient Value 0.9 2.08 50 Unit °C/W °C/W °C/W DocID024360 Rev 3 3/23 http://www.Datasheet4U.com Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA VGE = 15 V, IC = 20 A 600 V 1.8 2.15 2.2 VCE(sat) VGE = 15 V, IC = 20 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 20 A TJ = 175 °C IF = 20 A V 2.3 1.7 1.55 1.3 5 6 7 25 2.2 V V V V μA VF Forward on-voltage IF = 20 A TJ = 125 °C IF = 20 A TJ = 175 °C VGE(th) ICES IGES Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) VCE = VGE, IC = 1 mA VCE = 600 V VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol Cies Coes Cres Qg Qge Qgc Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge VCC = 480 V, IC = 20 A, VGE = 15 V, see Figure 29 VCE = 25 V, f = 1 MHz, VGE = 0 Test conditions Min. Typ. 2800 110 64 116 24 50 Max. Unit pF pF pF nC nC nC 4/23 DocID024360 Rev 3 http://www.Datasheet4U.com STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Eon(1) Eoff(2) Ets td(on) tr (di/dt)on td(off) tf Eon(1) Eoff(2) Ets 1. Parameter Turn-on delay time Current rise time Turn-on current slope Turn-off delay time Current fall time Turn-on switching losses Turn-off switching losses Total switching losses Turn-on delay time Current rise time Turn-on current slope Turn-off delay time Current fal.


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