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STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed trench gate field-stop IGBT
Datasheet - production data
TAB
TAB
Features
• Maximum junction temperature: TJ = 175 °C • Very high speed switching series
3 2 1 1
3
• Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance
3
TO-220
TAB
D²PAK
3 2 1 1 2
• Very fast soft recovery antiparallel diode • Lead free package
TO-247
TO-3P
Figure 1. Internal schematic diagram
Applications
• Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary
Order code STGB20V60DF STGP20V60DF STGW20V60DF STGWT20V60DF June 2013
This is information on a product in full production.
Marking GB20V60DF GP20V60DF GW20V60DF GWT20V60DF
Package D²PAK TO-220 TO-247 TO-3P
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Contents
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
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STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol VCES IC IC ICP(1) VGE IF IF IFP(1) PTOT TSTG TJ Parameter Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C Continuous collector current at TC = 100 °C Pulsed collector current Gate-emitter voltage Continuous forward current at TC = 25 °C Continuous forward current at TC = 100 °C Pulsed forward current Total dissipation at TC = 25 °C Storage temperature range Operating junction temperature Value 600 40 20 80 ±20 40 20 80 167 - 55 to 150 - 55 to 175 Unit V A A A V A A A W °C °C
1. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3. Thermal data
Symbol RthJC RthJC RthJA Parameter Thermal resistance junction-case IGBT Thermal resistance junction-case diode Thermal resistance junction-ambient Value 0.9 2.08 50 Unit °C/W °C/W °C/W
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Electrical characteristics
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
2
Electrical characteristics
TJ = 25 °C unless otherwise specified. Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Collector-emitter V(BR)CES breakdown voltage (VGE = 0)
IC = 2 mA VGE = 15 V, IC = 20 A
600
V
1.8 2.15
2.2
VCE(sat)
VGE = 15 V, IC = 20 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 20 A TJ = 175 °C IF = 20 A
V 2.3 1.7 1.55 1.3 5 6 7 25 2.2 V V V V μA
VF
Forward on-voltage
IF = 20 A TJ = 125 °C IF = 20 A TJ = 175 °C
VGE(th) ICES IGES
Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0)
VCE = VGE, IC = 1 mA VCE = 600 V VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol Cies Coes Cres Qg Qge Qgc Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge VCC = 480 V, IC = 20 A, VGE = 15 V, see Figure 29 VCE = 25 V, f = 1 MHz, VGE = 0 Test conditions Min. Typ. 2800 110 64 116 24 50 Max. Unit pF pF pF nC nC nC
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STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol td(on) tr (di/dt)on td(off) tf Eon(1) Eoff(2) Ets td(on) tr (di/dt)on td(off) tf Eon(1) Eoff(2) Ets
1.
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-off delay time Current fall time Turn-on switching losses Turn-off switching losses Total switching losses Turn-on delay time Current rise time Turn-on current slope Turn-off delay time Current fal.