SW740U

SAMWIN SW740U N-channel TO-220 MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.55Ω)@VGS=10V ■ Gate Charge (Typical 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 BVDSS : 400V ID : 10A RDS(ON) : 0.55ohm 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. Order Codes Item 1 Sales Type SW P 740U Marking SW740 Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC Continuous Drain Current (@TC Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above 25oC =25oC) (note 2) (note 1) (note 3) =25oC) =100oC) (note 1) Parameter Value 400 10* 6.3* 40 ±30 1200 170 5 226 1.8 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal characteristics Symbol Rthjc Rthcs Rthja Parameter Thermal resi...