IRF6775MTRPbF

DIGITAL AUDIO MOSFET IRF6775MTRPbF Key Parameters 150 47 25.0 3.0 m: nC V Features Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier applications Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for better THD and lower EMI Low package stray inductance for reduced ringing and lower EMI Can deliver up to 250W per channel into 4Ω Load in Half-Bridge Configuration Amplifier Dual sided cooling compatible · Compatible with existing surface mount technologies · RoHS compliant containing no lead or bromide ·Lead-Free (Qualified up to 260°C Reflow) SQ SX ST SH MQ MX VDS RDS(on) typ. @ VGS = 10V Qg typ. RG(int) max. 5 & ) 5 & MZ MT MN MZ DirectFET ™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6775MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the vol...