IRF6643TRPbF

DIGITAL AUDIO MOSFET Features Latest MOSFET silicon technology Key parameters optimized for Class-D audio amplifier applications Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for better THD and lower EMI Low package stray inductance for reduced ringing and lower EMI Can deliver up to 200 W per channel into 8Ω load in half-bridge configuration amplifier Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant, halogen-free Lead-free (qualified up to 260°C reflow) IRF6643TRPbF Key Parameters VDS RDS(ON) typ. @ VGS = 10V Qg typ. RG(int) typ. 150 29 39 0.9 V mΩ nC Ω MZ DirectFET® ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details) SH SJ ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6643PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast...