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IRG4PC50F-EPBF Dataheets PDF



Part Number IRG4PC50F-EPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Fast Speed IGBT
Datasheet IRG4PC50F-EPBF DatasheetIRG4PC50F-EPBF Datasheet (PDF)

PD - 96168 IRG4PC50F-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AD package • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimiz.

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PD - 96168 IRG4PC50F-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AD package • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 70 39 280 280 ± 20 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.24 ––– 6 (0.21) Max. 0.64 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 08/06/08 http://www.Datasheet4U.com IRG4PC50F-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage „ 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.62 — 1.45 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.79 — 1.53 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -14 gfe Forward Transconductance … 21 30 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA VGE = 15V 1.6 IC = 39A — IC = 70A See Fig.2, 5 V — IC = 39A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 39A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 2000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 n A VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 190 28 65 31 25 240 130 0.37 2.1 2.47 28 24 390 230 5.0 13 4100 250 49 Max. Units Conditions 290 IC = 39A 42 nC VCC = 400V See Fig. 8 97 VGE = 15V — — TJ = 25°C ns 350 IC = 39A, VCC = 480V 190 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 10, 11, 13, 14 3.0 — TJ = 150°C, — IC = 39A, VCC = 480V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 13, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com http://www.Datasheet4U.com IRG4PC50F-EPbF 100 For both: Triangular wave: 80 Load Current (A) Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 40W Clamp voltage: 80% of rated 60 Square wave: 60% of rated voltage 40 20 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 1 - Typical Load Current vs. Frequency IC , Collector-to-Emitter Current (A) 1000 1000 100 IC , Collector-to-Emitter Current (A) 100 TJ = 150°C TJ = 25°C 10 10 TJ = 150°C TJ = 25°C 1 0.1 VGE = 15V 20µs PULSE WIDTHA 1 10 1 5 6 7 8 9 VCC = 50V 5µs PULSE WIDTH A 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 http://www.Datasheet4U.com IRG4PC50F-EPbF 70 Maximum DC Collector Current (A) 60 VCE , Collector-to-Emitter Voltage (V) VGE = 15V 2.5 V GE = 15V 80µs PULSE WIDTH I C = 78A 50 2.0 40 30 IC = 39A 1.5 20 10 I.


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