DISCRETE SEMICONDUCTORS
DATA SHEET
BLV91/SL UHF power transistor
Product specification September 1988
http://www.Datas...
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV91/SL UHF power
transistor
Product specification September 1988
http://www.Datasheet4U.com
Philips Semiconductors
Product specification
UHF power
transistor
DESCRIPTION
NPN silicon planar epitaxial
transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES
BLV91/SL
diffused emitter-ballasting resistors for an optimum temperature profile. gold metallization ensures excellent reliability. the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6). The
transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base.
QUICK REFERENCE DATA RF performance in a common-emitter class-B circuit MODE OF OPERATION narrow band; CW T °C Tmb = 25 Ta = Ta = Note 1. Device mounted on a printed-circuit board (see Fig.6). 25(1) 25(1) VCE V 12.5 12.5 9.6 f MHz 900 900 900 PL W 2 1.5 1.5 Gp dB > 6.5 > 6.5 typ. 6.6 ηC % > 50 > 50 typ. 60
PIN CONFIGURATION
PINNING - SOT172D. PIN 1 2
1
DESCRIPTION emitter base collector emitter
handbook, halfpage
3 4
3
2
4 Top view
MSB007
Fig.1 Simplified outline. SOT172D.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
September 1988
2
http://www.Datasheet4U.com
Philips Semiconductors
Product specification
UHF power
transistor
RATINGS Limiting value...