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EMB51 Dataheets PDF



Part Number EMB51
Manufacturers ROHM
Logo ROHM
Description Complex Digital Transistors
Datasheet EMB51 DatasheetEMB51 Datasheet (PDF)

EMB51 Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet l Outline Parameter VCC IC(MAX.) R1 R2 DTr1 and DTr2 -50V -100mA 22kΩ 22kΩ EMT6     EMB51 (SC-107C)                             l Features 1) Two DTA024E chips in a EMT6 package. 2) Transister elements are independent, eliminating interface. 3) Mounting cost and area can be cut in half. 4) Lead Free/RoHS Compliant. l Inner circuit l Application Switching circuit, Inverter circuit, Interface circuit, Driver.

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EMB51 Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet l Outline Parameter VCC IC(MAX.) R1 R2 DTr1 and DTr2 -50V -100mA 22kΩ 22kΩ EMT6     EMB51 (SC-107C)                             l Features 1) Two DTA024E chips in a EMT6 package. 2) Transister elements are independent, eliminating interface. 3) Mounting cost and area can be cut in half. 4) Lead Free/RoHS Compliant. l Inner circuit l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit l Packaging specifications                                             Part No. EMB51   Package EMT6   Package size 1616   Taping code T2R   Reel size Tape width (mm) (mm) 180   Basic ordering unit.(pcs) 8000   Marking B51   8                                                                                             www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/5 20131001 - Rev.003 http://www.Datasheet4U.com EMB51            Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage Output current Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCC VIN IO IC(MAX)*1 PD*2 *3 Tj Tstg Values -50 -40 to 10 -30 -100 150(Total) 150 -55 to +150 Unit V V mA mA mW ℃ ℃ l Electrical characteristics (Ta = 25°C) Values Parameter Symbol VI(off) VI(on) Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency VO(on) II IO(off) GI R1 R2/R1 f T*1 Conditions Min. Input voltage VCC = -5V, IO = -0.1mA VO = -0.3V, IO = -5mA IO / I I = -5mA / -0.5mA VI = -5V VCC = -50V, VI = 0V VO = -10V, IO = -5mA VCE = -10V, IE = 5mA, f = 100MHz -3 60 15.4 0.8 Typ. -0.07 22 1 250 Max. -0.5 V -0.15 -0.36 -0.5 28.6 1.2 V mA μA kΩ MHz Unit *1 Characteristics of built-in transistor. *2 terminal mounted on a reference footprint. *3 120mW per element must not be exceeded.                                                                                         www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/5 20131001 - Rev.003 http://www.Datasheet4U.com EMB51            Datasheet l Electrical characteristic curves(Ta=25℃ ) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 Output current vs. output voltage Fig.4 DC current gain vs. output current                                                                                             www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/5 20131001 - Rev.003 http://www.Datasheet4U.com EMB51            Datasheet l Electrical characteristic curves(T a=25°C) Fig.5 Output voltage vs. output current                                                                                             www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 4/5 20131001 - Rev.003 http://www.Datasheet4U.com EMB51 l Dimensions            Datasheet                                                                                             www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/5 20131001 - Rev.003 http://www.Datasheet4U.com http://www.Datasheet4U.com .


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