DKI10526

100 V, 19 A, 34.4 mΩ Low RDS(ON) N ch Trench Power MOSFET DKI10526 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 19 A  RDS(ON) ----------54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)  Qg------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.5 V Gate Drive  100 % UIL Tested  RoHS Compliant Package TO-252 (4) D (1) (2) (3) GDS (3) (2) (1) SDG Applications  DC-DC converters  Synchronous Rectification  Power Supplies Equivalent circuit D(2)(4) G(1) S(3) Absolute Maximum Ratings  Unless otherwise specified, TA = 25 °C Parameter Symbol Drain to Source Voltage VDS Gate to Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) IDM IS ISM Single Pulse Avalanche Energy EAS Avalanche Curre...