High Speed Switching Diode
PROCESS
CPD30V
Dual Switching Diode
Dual, Common Cathode, High Speed Switching Diode Chip
PROCESS DETAILS Die Size Di...
Description
PROCESS
CPD30V
Dual Switching Diode
Dual, Common Cathode, High Speed Switching Diode Chip
PROCESS DETAILS Die Size Die Thickness Anode 1 Bonding Pad Area Anode 2 Bonding Pad Area Top Side Metalization Back Side Metalization 15.4 x 15.4 MILS 7.1 MILS 5.9 x 5.9 x 8.3 MILS 5.9 x 5.9 x 8.3 MILS Al - 30,000Å Au-As - 10,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 46,200 PRINCIPAL DEVICE TYPE CMLD2838
BACKSIDE COMMON CATHODE
R0
R2 (6-October 2011)
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PROCESS
CPD30V
Typical Electrical Characteristics
R2 (6-October 2011)
w w w. c e n t r a l s e m i . c o m
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