PROCESS
CPD109R
Schottky Diode
Low VF Schottky Diode Chip
PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Ar...
PROCESS
CPD109R
Schottky Diode
Low VF
Schottky Diode Chip
PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 8.3 x 8.3 MILS 3.9 MILS 5.4 x 5.4 MILS Al - 20,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 251,364 PRINCIPAL DEVICE TYPE CFSH01-30L
R0 (13-April 2011)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.com
PROCESS
CPD109R
Typical Electrical Characteristics
R0 (13-April 2011)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.com
...
