PROCESS
Small Signal Transistor
CP588V
PNP - Low Noise Amplifier Transistor Chip
PROCESS DETAILS Process Die Size Di...
PROCESS
Small Signal
Transistor
CP588V
PNP - Low Noise Amplifier
Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 54,599 PRINCIPAL DEVICE TYPES 2N2605 2N3799 PN4250A CMPT5086 CMPT5087 EPITAXIAL PLANAR 14.6 x 14.6 MILS 7.1 MILS 3.9 x 3.9 MILS 5.5 x 5.5 MILS Al - 30,000Å Au - 18,000Å
BACKSIDE COLLECTOR
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.com
PROCESS
CP588V
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
http://www.Datasheet4U.com
...
