B1565

2SB1565 Transistors For Power Amplification (−60V, −3A) 2SB1565 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 10.0 4.5 φ3.2 2.8 14.0 zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Low frequency power amplifier Stereophonic output Stabilization of power supply zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −60 −60 −7 −3 −6 2 25 150 −55 to +150 Unit V V V A A ∗1 zComplements PNP 2SB1565 NPN 2SD2394 zPackaging specifications and hFE Package Type hFE 2SB1565 EF Code Basic ordering unit (pieces) Taping − 500 hFE values are classified as follows: Item hFE E 100 to 200 F 160 to 320 Collector power dissipation Junction temperature Storage temperature ∗1 Pw=100ms, non repetitive pulse W(Ta=25°C) W(Tc=25°C) °C °C zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗1 Single pulse ∗2 hFE rank Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. Typ. Max. Unit −60 −60 ...