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K15T120

Infineon

IGBT

IKW15T120 TrenchStop Series ® Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery ...


Infineon

K15T120

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Description
IKW15T120 TrenchStop Series ® Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C            Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D Short circuit withstand time – 10s Designed for : - Frequency Converters - Uninterrupted Power Supply ® TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 15A VCE(sat),Tj=25°C 1.7V Tj,max 150C Marking Code K15T120 Package PG-TO-247-3 G E PG-TO-247-3 Type IKW15T120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Tj Tstg -40...+150 -55...+150 C 2) Symbol VCE IC Value 1200 30 15 Unit V A ...




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