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2N7612M1

International Rectifier
Part Number 2N7612M1
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 22, 2014
Detailed Description PD-97178 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level R...
Datasheet PDF File 2N7612M1 PDF File

2N7612M1
2N7612M1

Overview
PD-97178 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.
22Ω IRHLG73110 300K Rads (Si) 0.
22Ω ID 1.
8A 1.
8A 2N7612M1 IRHLG77110 100V, Quad N-CHANNEL TECHNOLOGY ™ MO-036AB International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.
The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.
This is achieved while maintaining single event gate rupture and single event burnout immunity.
These devices are used in ap...


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