IRGS4615DPBF

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175°C G E E G G C C C C E VCE(on) typ. = 1.55V @ 8A n-channel G D2-Pak IRGS4615DPbF TO-220AB IRGB4615DPbF C E Applications Appliance Drives Inverters UPS Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Gate Collector Em itter → Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Base part number IRGS4615DPbF IRGS4615DTRRPbF IRGS4615DTRLPbF IRGB4615DPbF Package Type D PAK TO-220AB 2 Standard Pack Form Tube Tape and Reel Right Tape and Reel Left Tube Orderable Part Number Quantity 50 800 800 50 IRGS4615DPbF IRGS4615DTRRPbF IRGS4615DTRLPbF IRGB4615DPbF Absolute Maximum Ratings VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM IF@TC=25°C IF@TC=100°C IFM VGE PD @ TC =25° PD @ TC =100° TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Con...