IRFP3006PBF

  IRFP3006PbF 60V 2.1m 2.5m 270A 195A G VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)     D D G S S TO-247AC Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free Base Part Number   IRFP3006PbF   TO-247 Package Type G Gate D Drain S Source Standard Pack Form Quantity Tube 25   Orderable Part Number   IRFP3006PbF   Max. 270 190 195 1080 375 2.5 ± 20 10   Units A       W W/°C V V/ns °C 300 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) ID @ TC = 25°C Pulsed Drain Current  IDM Maximum Power Dissipation PD @TC = 25°C Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery  dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance Symbol Parameter Junction-to-Case  RJC Case-to-Sink, Flat Greased Surface RCS Jun...