IRFI4110GPBF

PD - 96347 IRFI4110GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) D 100V 3.7mΩ 4.5mΩ 72A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free D G G D S S TO-220AB Full-Pak G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Max. 72 51 290 61 0.41 ± 20 27 -55 to + 175 300 10lb in (1.1N m) 71 43 6.1 Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw W W/°C V V/ns °C e x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy d mJ A mJ f Typ. ––– ––– Thermal Resistance Symbol RθJC RθJA Junction-to-Case j Parameter Max. 2.46 65 Units °C/W Junction-to-Ambient i www.irf.com 1 01/11/11 Free Datasheet http://www.Datasheet4U.com IRFI4110GPbF Static...