Power MOSFET
IRFI3306GPbF
VDSS RDS(on) typ. max. ID
D
Applications High Efficiency Synchronous Rectification in SMPS Uninte...
Description
IRFI3306GPbF
VDSS RDS(on) typ. max. ID
D
Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Halogen-Free
60V 3.3m 4.2m 71A
D
G
G
S
D
S
TO-220 Full-Pak D Drain S Source
G Gate
Base Part Number IRFI3306GPbF
Package Type TO-220 Full-Pak
Standard Pack Form Quantity Tube 50
Orderable Part Number IRFI3306GPbF
Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy (Thermally Limited) TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient (PCB Mount) RJA
Max. 71 50 300 46 0.31 ± 20 311 -55 to + 175 300 10lbin (1.1Nm) Typ. ––– ––– Max. 3.23 65
Units A
W W/°C V mJ °C Units °C/W
1
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October 7, 2013
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IRFI3306GPbF
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