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VI40100C Dataheets PDF



Part Number VI40100C
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VI40100C DatasheetVI40100C Datasheet (PDF)

www.vishay.com V40100C, VI40100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V40100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI40100C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorizat.

  VI40100C   VI40100C



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www.vishay.com V40100C, VI40100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V40100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI40100C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 20 A 100 V 250 A VF at IF = 20 A 0.61 V TJ max. Package 150 °C TO-220AB, TO-262AA Diode variation Common cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Voltage rate of change (rated VR) Operating junction and storage temperature range dV/dt TJ, TSTG V40100C VI40100C 100 40 20 250 10 000 - 40 to + 150 UNIT V A A V/μs °C Revision: 16-Aug-13 1 Document Number: 89162 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V40100C, VI40100C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. Instantaneous forward voltage per diode IF = 5 A IF = 10 A IF = 20 A IF = 5 A IF = 10 A IF = 20 A Reverse current at rated VR per diode VR = 70 V VR = 100 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VF (1) IR (2) 0.47 0.54 0.67 0.38 0.45 0.61 9 10 21 MAX. 0.73 0.67 1000 45 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode RJC V40100C VI40100C 2.0 UNIT V μA mA μA mA UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) TO-220AB V40100C-M3/4W 1.85 TO-262AA TO-220AB TO-262AA VI40100C-M3/4W V40100CHM3/4W (1) VI40100CHM3/4W (1) 1.45 1.85 1.45 Note (1) AEC-Q101 qualified  RATINGS AND CHARACTERISTICS CURVES  (TA = 25 °C unless otherwise noted) PACKAGE CODE 4W 4W 4W 4W BASE QUANTITY 50/tube 50/tube 50/tube 50/tube DELIVERY MODE Tube Tube Tube Tube Average Forward Current (A) Average Power Loss (W) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve 18 16 D = 0.8 14 D = 0.5 D = 0.3 12 10 D = 0.2 D = 1.0 8 D = 0.1 6 T 4 2 D = tp/T tp 0 0 5 10 15 20 25 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 16-Aug-13 2 Document Number: 89162 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 Instantaneous Forward Voltage (V) 1 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 0.1 0.01 TA = 100 °C TA = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Transient Thermal Impedance (°C/W) Junction Capacitance (pF) V40100C, VI40100C Vishay General Semiconductor 10 000 1000 100 0.1 1 10 Reverse Voltage (V) 100 Fig. 5 - Typical Junction Capacitance Per Diode 10 Junction to Case 1 0.1 0.01 0.1 1 10 t - Pulse Duration (s) 100 Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 16-Aug-13 3 Document Number: 89162 For technical questions within your region: [email protected], [email protected], DiodesEurope@vi.


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