www.vishay.com
V40100C, VI40100C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA K
V40100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VI40100C
3 2 1
PIN 1
PIN 2
PIN 3
K
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
2 x 20 A 100 V 250 A
VF at IF = 20 A
0.61 V
TJ max. Package
150 °C TO-220AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Voltage rate of change (rated VR) Operating junction and storage temperature range
dV/dt TJ, TSTG
V40100C
VI40100C
100
40
20
250
10 000 - 40 to + 150
UNIT V
A
A V/μs °C
Revision: 16-Aug-13
1 Document Number: 89162
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V40100C, VI40100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
IF = 5 A IF = 10 A IF = 20 A IF = 5 A IF = 10 A IF = 20 A
Reverse current at rated VR per diode
VR = 70 V VR = 100 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C
VF (1) IR (2)
0.47 0.54 0.67 0.38 0.45 0.61
9 10 21
MAX.
0.73 0.67 1000 45
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RJC
V40100C
VI40100C
2.0
UNIT
V
μA mA μA mA
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V40100C-M3/4W
1.85
TO-262AA TO-220AB TO-262AA
VI40100C-M3/4W V40100CHM3/4W (1) VI40100CHM3/4W (1)
1.45 1.85 1.45
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
PACKAGE CODE 4W 4W 4W 4W
BASE QUANTITY 50/tube 50/tube 50/tube 50/tube
DELIVERY MODE Tube Tube Tube Tube
Average Forward Current (A) Average Power Loss (W)
50
40
30
20
10
0 0 25 50 75 100 125 150 175 Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
18
16 D = 0.8
14 D = 0.5
D = 0.3 12
10 D = 0.2
D = 1.0
8 D = 0.1 6
T
4
2
D = tp/T
tp
0 0 5 10 15 20 25
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 16-Aug-13
2 Document Number: 89162
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Instantaneous Forward Current (A)
100 TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1 TA = 25 °C
0.1 0
0.2 0.4 0.6 0.8 Instantaneous Forward Voltage (V)
1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Instantaneous Reverse Current (mA)
100 TA = 150 °C
10 TA = 125 °C
1 0.1 0.01
TA = 100 °C TA = 25 °C
0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
V40100C, VI40100C
Vishay General Semiconductor
10 000
1000
100 0.1
1 10 Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
10 Junction to Case
1
0.1 0.01
0.1 1 10 t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 16-Aug-13
3 Document Number: 89162
For technical questions within your region:
[email protected],
[email protected], DiodesEurope@vi.