2SA1505
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdiv...
2SA1505
PNP Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications.
The
transistor is subdivided into two groups, O and Y, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 35 30 5 500 50 150 125 -55 to+125 Unit V V V mA mA mW
O O
C C
Page 1 of 2
7/15/2011
Free Datasheet http://www.Datasheet4U.com
Characteristics at Tamb=25 OC
Parameter DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group O Y at -VCE=6V, -IC=400mA Collector Cutoff Current at -VCB=35V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Base Emitter Voltage at -IC=100mA, - VCE=1V Gain Bandwidth Product at -VCE=6V, -IC=20mA Output Capacitance at -VCB=6V, f=1MHz COB 13 pF fT 200 MHz -VBE 0.8 1 V -VCE(sat) 0.1 0.25 V -IEBO 0.1 μA -ICBO 0.1 μA O Y hFE hFE hFE hFE 70 120 25 40 140 240 Symbol Min. Typ. Max. Unit
Page 2 of 2
7/15/2011
Free Datasheet http://www.Datasheet4U.com
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