2SC2954

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2954 DESCRIPTION ·Low Noise and High Gain NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.15 A 2 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2954 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 hFE DC Current Gain IC= 50mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain NF Noise Figure IE= 0 ; VCB= 10V;f= 1.0MHz IC= 50mA ; VCE= 10V;f= 500MHz RG= 50Ω IC= 30mA ; VCE= 10V;f= 500MHz RG= 50Ω MIN TYP. MAX UNIT 0.1 μA 30 200 3.0 4.0 GHz 1.1 1.8 pF 10 12.5 dB 2.4 4.0 dB NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notif...