NE202930

PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor FEATURES High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage (Less than 5 V) Suitable for up to 1 GHz applications R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 APPLICATIONS LNA (Low Noise Amplifier) or power splitter for digital-TV OUTLINE RENESAS Package code: 30 (Package name: 3-pin super minimold (30 PKG)) 1. Emitter 2. Base 3. Collector Note: Marking is "R7D" ORDERING INFORMATION Part Number NE202930-T1 Order Number NE202930-T1-A Package 3-pin super minimold (30 PKG) (Pb-Free) Marking R7D Supplying Form Embossed tape 8 mm wide Pin 3 face the perforation side of the tape Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE202930 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage (Base Short) Collector to Emitter Voltage (Base Open) Emitter to Base Voltage Collector Current Total Power Dissipation Note Junction Temperature Storage Temperature Note: Free air Symbol VCBO VCES VCEO VEBO IC Ptot Tj Tstg Ratings 9 9 6 2 100 150 150 −65 to +150 Unit V V V V mA mW °C °C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 Page 1 of 6 Free Datasheet http://www.Datasheet4U.com NE202...