IRF1010

SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits. G G D S TO-220AB (IRF1010A) D S FEATURES RDS(ON) = 8.5mΩ @ VGS = 10V Ultra low gate charge(86nC max.) Low reverse transfer capacitance (C RSS = 200pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF1010H) D (Drain) PRODUCT SUMMARY ID (A) ID (A), Package Limited VDSS (V) RDS(ON) (mΩ) QG(nC) max. 84 75 60 8.5 @ V GS = 10V 86 G (Gate) S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL VDSS V DGR V GS ID I DM I AR E AR E AS dv/dt PD TJ T STG TL PARAMETER Drain to Source voltage Drain to Gate voltage Gate to Source voltage V GS =10V, T C =25°C Continuous Drain Current (Note 1) TEST CONDITIONS T J =25°C to 150°C R GS =20KΩ VALUE 60 60 ±20 84 60 UNIT V V GS =10V, T C =100°C Pulsed Drain current(Note 2) Avalanche current(Note 2) Repetitive avalanche energy(Note 2 ) Single pulse avalanche energy(Note 3) Peak diode recovery dv/dt(Note 4) Total powe...