Document
STD100N03L-1 STD100N03L
N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET
General features
Type STD100N03L STD100N03L-1
■ ■ ■
Package
ID Pw
VDSSS 30 V 30 V
RDS(on)
<0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W
3 1
1 3 2
100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD
DPAK
IPAK
Description
This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters.
Internal schematic diagram
Applications
■ ■
HIGH CURRENT, HIGH SWITCHING DC-DC CONVERTER AUTOMOTIVE
Order codes
Sales Type STD100N03LT4 STD100N03L-1 Marking D100N03L D100N03L-1 Package DPAK IPAK Packaging TAPE & REEL TUBE
September 2005
Rev 2 1/14
www.st.com 14
Free Datasheet http://www.Datasheet4U.com
1 Electrical ratings
STD100N03L - STD100N03L-1
1
Table 1.
Electrical ratings
Absolute maximum ratings
Parameter Drain-Source Voltage (VGS = 0) Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Value 30 ± 20 80 70 320 110 0.73 3.9 -55 to 175 Unit V V A A A W W/°C V/ns °C
Symbol VDS VGS ID Note 1 ID IDM Note 2 PTOT
dv/dt Note 3 Peak Diode Recovery Voltage Slope Tj Tstg Operating Junction Temperature Storage Temperature
Table 2.
Rthj-case Rthj-amb Tl
Thermal Data
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose (for 10sec. 1.6 mm from case) 1.36 100 275 °C/W °C/W °C
Table 3.
Symbol IAV EAS
Avalanche characteristics
Parameter Not-Repetitive Avalanche Current (pulse width limited by Tj max) Single pulsed avalanche Energy (starting Tj=25°C, ID=IAV, VDD = 24V Value 40 Unit A
500
mJ
2/14
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STD100N03L - STD100N03L-1
2 Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol V(BR)DSS IDSS
On/Off states
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Static Drain-Source On Resistance Test Conditions ID = 250µA, V GS= 0 VDS = Max Rating, VDS = Max Rating, Tc=125°C VDS = ± 20 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 40 A VGS= 5 V, ID= 20 A VGS= 10 V, ID= 40 A @125°C VGS= 5 V, ID= 20 A @125°C 1 0.0045 0.008 0.0068 0.0146 0.0055 0.01 Min. 30 10 100 ±200 Typ. Max. Unit V µA µA nA V Ω Ω Ω Ω
IGSS VGS(th) RDS(on)
RDS(on)
Table 5.
Symbol gfs Note 4 Ciss Coss Crss Qg Qgs Qgd RG
Dynamic
Parameter Forward Transconductance Test Conditions VDS = 10 V, ID= 15 A Min. Typ. 31 2060 728 67 20 7 7.5 27 Max. Unit S pF pF pF nC nC nC Ω
Input Capacitance VDS = 25V, f = 1 MHz, V GS =0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 24 V, ID = 80 A, VGS = 5V (see Figure 15) f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain
Gate Input Resistance
1.9
Table 6.
Symbol td(on) tr td(off) tf
Switching time
Parameter Turn-on Delay Time Rise Time Test Conditions VDD = 15 V, ID = 40 A RG= 4.7 Ω, VGS= 10V, (see Figure 14) VDD = 15 V, ID = 40 A RG= 4.7 Ω, VGS= 10V, (see Figure 14) Min. Typ. 9 205 Max. Unit ns ns
Turn-off Delay Time Fall Time
31 35
ns ns
3/14
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2 Electrical characteristics
STD100N03L - STD100N03L-1
Table 7.
Symbol ISD
Source-Drain Diode
Parameter Test Conditions Min. Typ. Max. 80 320 ISD = 40 A, V GS = 0 ISD = 80 A, di/dt = 100 A/µs VDD = 25 V, Tj = 150 °C (see Figure 16) 40 40 2 1.3 Unit A A V ns nC A
Source-Drain Current ISDMNote 2 Source-Drain Current (pulsed) VSD Note 4 trr Qrr IRRM Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
(1) Current limited by package. (2) Pulse width limited by safe operating area (3) ISD ≤ 80A, di/dt ≤ 360 A/µs, VDS≤ V(BR)DSS , Tj ≤ TjMAX (4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
4/14
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STD100N03L - STD100N03L-1
2 Electrical characteristics
2.1
Electrical characteristics (curves)
Safe Operating Area Figure 2. Thermal Impedance
Figure 1.
Figure 3.
Output Characteristics
Figure 4.
Transfer Characteristics
Figure 5.
Transconductance
Figure 6.
Static Drain-source on Resistance
5/14
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2 Electrical characteristics
STD100N03L - STD100N03L-1
Figure 8. Capacitance Variation
Figure 7.
Gate Charge vs Gate-source Voltage
Figure 9.
Normalized Gate Thereshold Voltage vs Temperature
Figure 10. Normalized BVDSS vs Temperature
Figure 11. N.