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2PG011

Panasonic

Silicon N-Channel Enhancement IGBT


Description
This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)  Package  Code TO-220D-A1  Pin Name 1. Gate 2. Collector 3. Em...



Panasonic

2PG011

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