LAPT
2SC2922
Application : Audio and General Purpose
(Ta=25°C) 2SC2922 100max 100max 180min 30min∗ 2.0max 50typ 250typ ...
LAPT
2SC2922
Application : Audio and General Purpose
(Ta=25°C) 2SC2922 100max 100max 180min 30min∗ 2.0max 50typ 250typ V MHz pF
20.0min 4.0max
Silicon
NPN Epitaxial Planar
Transistor (Complement to type 2SA1216) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj 2SC2922 180 180 5 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=180V VEB=5V IC=25mA VCE=4V, IC=8V IC=8A, IB=0.8A VCE=12V, IE=–2A VCB=10V, f=1MHz
External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2
Unit
µA µA
V
a b
2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
www.DataSheet4U.com Tstg
∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL (Ω) 4 IC (A) 10 VB2 (V) –5 IB1 (A) 1 IB2 (A) –1 ton (µs) 0.2typ tstg (µs) 1.3typ tf (µs) 0.45typ
Weight : Approx 18.4g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
1.5
1A
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E(s a t) (V ) 3
I C – V BE Temperature Characteristics (Typical)
17 15 (V C E =4V)
17
A
70
0m
A
600
15
mA mA 500 A 400m
300 mA
A
Collector Current I C (A)
200m
2
Collector Current I C (A)
10
10
em
p) as (C 5˚C
100 mA
1
˚C
0
0
1
2
3
4
0
0
0.2
0.4
0.6
0.8
1.0
0
0
25
1 Base-Emittor Voltage V B E (V)
–30
I B =20mA
˚C
12
5A
...
